RUQ050N02TR datasheet
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О ДАТАШИТЕ
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МаркировкаRUQ050N02TR
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ПроизводительRohm
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ОписаниеRohm RUQ050N02TR Configuration: Single Quad Drain Continuous Drain Current: 5 A Current - Continuous Drain (id) @ 25?° C: 5A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 6.5 S Gate Charge (qg) @ Vgs: 12nC @ 4.5V Gate Charge Qg: 12 nC Gate-source Breakdown Voltage: +/- 10 V Input Capacitance (ciss) @ Vds: 900pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TSMT6 Power - Max: 1.25W Power Dissipation: 1250 mW Rds On (max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1.3V @ 1mA
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