STP260N6F6

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STP260N6F6 datasheet

• Маркировка
  STP260N6F6
• Производитель
  STMicroelectronics
• Описание
  STMicroelectronics STP260N6F6 Current - Continuous Drain (id) @ 25?° C: 120A Drain To Source Voltage (vdss): 75V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 183nC @ 10V Input Capacitance (ciss) @ Vds: 11400pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: * Package / Case: * Power - Max: 300W Rds On (max) @ Id, Vgs: 3 mOhm @ 60A, 10V Series: STripFET?„? DeepGATE?„? Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 120 A Resistance Drain-Source RDS (on): 2.4 mOhms Mounting Style: Through Hole Fall Time: 62.6 ns Gate Charge Qg: 183 nC Power Dissipation: 300 W Rise Time: 165 ns Other Names: 497-11230-5
• Количество страниц
  15 шт.
• Форматы файла
  HTML, PDF

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